UMT1N Rohm, UMT1N Datasheet

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UMT1N

Manufacturer Part Number
UMT1N
Description
General Purpose Transistor (Isolated Dual Transistors)
Manufacturer
Rohm
Datasheet

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Transistors
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A
1) Two 2SA1037AK chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent,
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both
Tr
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
1
automatic mounting machines.
eliminating interference.
EMT1 / UMT1N
and Tr
package.
Tr
2
(3)
(4)
2
Parameter
.
(2)
(5)
EMT1, UMT1N
IMT1A
Tr
(6)
(1)
1
Symbol
V
V
V
Tstg
IMT1A
P
CBO
CEO
I
Tj
EBO
C
C
Tr
2
(4)
(3)
150 (TOTAL)
300 (TOTAL)
−55 to +150
(5)
(2)
Limits
−150
−60
−50
150
Tr
−6
(6)
(1)
1
Unit
mW
mA
°C
°C
V
V
V
1
2
External dimensions (Unit : mm)
EMT1
ROHM : EMT6
UMT1N
ROHM : UMT6
EIAJ : SC-88
IMT1A
ROHM : SMT6
EIAJ : SC-74
0.3to0.6
0.1Min.
Abbreviated symbol : T1
Abbreviated symbol : T1
Abbreviated symbol : T1
EMT1 / UMT1N / IMT1A
( 4 )
( 5 )
( 6 )
1.2
1.6
1.6
2.8
1.25
2.1
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.A
1/3

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UMT1N Summary of contents

Page 1

... V −50 V −6 V −150 mA ∗ 150 (TOTAL ∗ 300 (TOTAL) 2 °C 150 −55 to +150 °C EMT1 / UMT1N / IMT1A ( 1.2 1.6 Each lead has same dimensions Abbreviated symbol : T1 1.25 2.1 0.1Min. Each lead has same dimensions Abbreviated symbol : T1 1.6 2.8 0.3to0.6 Each lead has same dimensions Abbreviated symbol : T1 Rev ...

Page 2

... V = -6V CE -0.2 -0 -10 -20 -50 -100 (mA) COLLECTOR CURRENT : I C Fig.5 DC current gain vs. collector current ( ΙΙ ) EMT1 / UMT1N / IMT1A Conditions = −50µA = −1mA = −50µA = −60V CB = − −50mA/−5mA / −6V −1mA −12V 2mA 100MHz −12V, I ...

Page 3

... C B -0.5 -0 100°C 25°C -0.1 -40°C -0.05 -0.2 -0 -10 -20 -50 -100 (mA) COLLECTOR CURRENT : I C Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMT1 / UMT1N / IMT1A 1000 ° 12V CE 500 200 100 50 0 100 (mA) EMITTER CURRENT : I E Fig.8 Gain bandwidth product vs. ...

Page 4

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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