2N1616 Seme LAB, 2N1616 Datasheet - Page 2

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2N1616

Manufacturer Part Number
2N1616
Description
NPN SILICON TRANSISTOR
Manufacturer
Seme LAB
Datasheet
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
* Pulse test t p = 300 s ,
V
V
V
V
V
h
f
R
I
I
I
T
CBO
CEX
EBO
(BR)CEO*
(BR)EBO*
(BR)CBO*
CEsat
BE
21E
th(J-C)
Collector-Base cut-off current
T
Collector-Emitter cut-off current
Emitter-Base cut-off current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base
Transition Frequency (f=1MHz)
Thermal Resistance (junction to case)
case
Parameter
-
Emitter Voltage
= 150°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
2%
Website:
V
V
V
I
I
I
V
I
V
V
C
B
C
C
CB
CB
EB
CE
CE
CE
= 1mA
= 100mA
= 1mA
= 2A
http://www.semelab.co.uk
= 8V
= 60V
= 60V
= 12V
= 12V
= 30V
Test Conditions
I
V
I
I
I
I
I
I
I
I
E
C
B
C
E
C
B
C
C
BE
= 0
= 0
= 0
= 250mA
= 0
= 0
= 2A
= 2A
= 300mA
= -1V
Min.
60
60
15
8
3
Typ.
Document Number 5643
Max. Units
1.75
2N1616
10
75
1
1
2
3
°C/W
MHz
mA
Issue 1
V
V
-

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