BTW69-1200 ST Microelectronics, BTW69-1200 Datasheet

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BTW69-1200

Manufacturer Part Number
BTW69-1200
Description
50A SCRs
Manufacturer
ST Microelectronics
Datasheet

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STANDARD
MAIN FEATURES:
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
April 2001 - Ed: 4
ABSOLUTE RATINGS (limiting values)
Symbol
I
P
T(RMS)
V
I
V
I
T(AV)
dI/dt
G(AV)
I
T
TSM
RGM
GM
DRM
I
Tj
Symbol
stg
²
I
t
T(RMS)
I
GT
/V
RRM
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
I
Critical rate of rise of on-state current I
2 x I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
²
t Value for fusing
GT
, tr
600 to 1200
100 ns
Value
50
80
Parameter
Unit
mA
A
V
www.DataSheet4U.com
G
BTW67 and BTW69 Series
=
tp = 8.3 ms
tp = 10 ms
TOP3 Ins.
TOP3 Ins.
tp = 20 µs
F = 60 Hz
RD91
RD91
(BTW67)
RD91
Tj = 125°C
Tj = 125°C
Tj = 125°C
Tc = 70°C
Tc = 75°C
Tc = 70°C
Tc = 75°C
Tj = 25°C
Tj = 25°C
- 40 to + 150
- 40 to + 125
Value
1680
610
580
50A SCRs
50
32
50
8
1
5
(BTW69)
TOP3
Unit
A/µs
A
°C
W
A
A
A
A
V
2
S
1/5

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BTW69-1200 Summary of contents

Page 1

... DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities ...

Page 2

... BTW67 and BTW69 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol 3 DRM 500 mA Gate open 1 dV/ Gate open D DRM 100 380 µ Threshold voltage ...

Page 3

... Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 5: Surge peak on-state current versus number of cycles. BTW67 and BTW69 Series Fig. 2: Average and D.C. on-state current versus case temperature. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. ...

Page 4

... BTW67 and BTW69 Series Fig. 7: On-state characteristics values). PACKAGE MECHANICAL DATA RD91 (Plastic) 4/5 (maximum REF. Millimeters Min 29. 13. 1.95 E3 0.70 F 4.00 I 11.20 L1 3.10 L2 1.70 N1 33° N2 28° DIMENSIONS Inches Max. Min. Max. 40.00 1.575 30.30 1.177 1.193 22.00 0.867 27.00 1.063 16.50 0.531 0.650 24.00 0.945 14 ...

Page 5

... The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia-Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. . STMicroelectronics GROUP OF COMPANIES http://www.st.com BTW67 and BTW69 Series 5/5 ...

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