BLT82 Philips Semiconductors, BLT82 Datasheet - Page 4

• Manufacturer Part Number: BLT82
• Description: UHF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1996 Feb 05
handbook, full pagewidth
R
V
V
V
I
h
C
C
SYMBOL
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
th j-s
= 25 C unless otherwise specified.
c
re
UHF power transistor
R th j-s
(K/W)
s
10
10
is the temperature at the soldering point of the collector pin.
1
1
2
10
5
thermal resistance from junction to
soldering point
collector-base breakdown voltage
collector-emitter breakdown voltage open base; I
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
= 0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0.00
PARAMETER
PARAMETER
Fig.3 Normalized thermal resistance as a function of pulse time.
10
4
10
P
open emitter; I
open collector; I
V
V
V
V
3
tot
CE
CE
CB
CE
= 1.9 W; T
= 6 V; V
= 5 V; I
= 6 V; I
= 6 V; I
CONDITIONS
4
C
E
C
C
BE
CONDITIONS
= 100 mA
= i
= 0; f = 1 MHz
= 10 mA
s
C
= 0
= 115 C; note 1
e
E
= 5 mA
= 0; f = 1 MHz
= 1 mA
10
2
20
10
3.5
30
MIN.
10
P
1
17
10
t p
TYP.
VALUE
T
32
Product specification
t p (s)
=
0.1
150
MAX.
t p
T
t
MGD208
BLT82
1
UNIT
K/W
V
V
V
mA
pF
pF
UNIT