MX043 Microsemi, MX043 Datasheet
![no-image](/images/manufacturer_photos/0/4/443/microsemi_sml.jpg)
MX043
Related parts for MX043
MX043 Summary of contents
Page 1
... Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with ultrafast body diode low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G) very low thermal resistance reverse polarity available upon request add suffix “R”st ...
Page 2
... MX043J MX043G Electrical Parameters @ 25 C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) ...
Page 3
KND (Known-Good-Die) SCREENING a. 100% die probe for BVDSS, VGS ambient b. 100% Visual Inspection i.a.w. method 2072 of MIL-STD-750 a. Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM b. ...
Page 4
Internal Visual (Precap) Inspection i.a.w. method 2069 and 2072 of MIL-STD-750 b. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 10 cycles, - +125 C c. Thermal Response i.a.w. method 3161 of MIL-STD-750 d. High Temperature Gate Bias ...