BFP490 Siemens Semiconductor Group, BFP490 Datasheet
BFP490
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BFP490 Summary of contents
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NPN Silicon RF Transistor Preliminary data For high power amplifiers Compression point P -1dB maxim. available Gain G Transition frequency f > 17 GHz T Gold metalization for high reliability SIEGET 25 - Line Siemens Grounded Emitter Transistor 25 GHz ...
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Electrical Characteristics at T Parameter DC characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current Emitter-base cutoff current ...
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Common Emitter S-Parameters GHz MAG ANG 150mA CE C -159.8 0.01 0.648 -178.5 0.1 0.916 173.7 0.3 0.921 168.2 0.5 0.92 159.1 0.9 0.921 157 1 0.919 147.1 1.5 0.928 138.8 2 ...
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SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.451 fA VAF = 24.665 1.9962 - VAR = 16.035 1.339 - RBM = 2.1262 CJE = 1.227 ...
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For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of thereverse characteristics, add the diode with the C’-E’- diode data between collector and emitter. Simulation of package is not necessary ...
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Total power dissipation P * Package mounted on epoxy 1200 mW 1000 900 800 700 600 T 500 A 400 300 200 100 Permissible Pulse Load K 0.5 0.2 ...
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Power gain 200 ...
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Noise figure Sopt 6.5 dB 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1 0.45 GHz 1 0.9 GHz f ...