BFP196 Siemens Semiconductor Group, BFP196 Datasheet
BFP196
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BFP196 Summary of contents
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NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • 7.5GHz T ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...
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SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.7264 fA VAF = 1.1766 - VAR = 3.8128 0.88299 - RBM = 1 CJE = 13.325 ...
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Total power dissipation P * Package mounted on epoxy 800 mW P tot 600 500 400 300 200 100 Permissible Pulse Load K/W R thJS ...
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Collector-base capacitance 1MHz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Power Gain ...
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Power Gain Parameter 18 I =50mA ...