BFQ67 Philips Semiconductors, BFQ67 Datasheet - Page 5

• Manufacturer Part Number: BFQ67
• Description: NPN 8 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1998 Aug 27
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
V
Fig.6
Fig.8
V
CE
CE
gain
(dB)
gain
(dB)
= 8 V; f = 1 GHz.
25
20
15
10
= 8 V; I
50
40
30
20
10
5
0
0
10
0
Gain as a function of collector current,
typical values.
Gain as a function of frequency, typical
values.
C
= 15 mA.
MSG
MSG
10
10
2
G UM
10
20
G max
3
G UM
I C (mA)
f (MHz)
G max
MRA611
MRA608
10
30
4
5
handbook, halfpage
handbook, halfpage
V
Fig.7
V
Fig.9
CE
CE
gain
(dB)
gain
(dB)
= 8 V; I
= 8 V; I
50
40
30
20
10
50
40
30
20
10
0
0
10
10
Gain as a function of frequency, typical
values.
Gain as a function of frequency, typical
values.
C
C
= 5 mA.
= 30 mA.
MSG
MSG
10
10
G UM
2
2
G UM
10
10
3
3
Product specification
G max
f (MHz)
f (MHz)
G max
MRA610
MRA609
BFQ67
10
10
4
4