BFQ235 Philips Semiconductors, BFQ235 Datasheet - Page 3

• Manufacturer Part Number: BFQ235
• Description: NPN video transistor
• Manufacturer: Philips Semiconductors

Discrete Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1998 Oct 06
handbook, halfpage
R
V
V
V
V
I
I
h
f
C
SYMBOL
SYMBOL
j
CES
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
th j-s
= 25 C unless otherwise specified.
cb
NPN video transistor
(mA)
s
400
I C
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
thermal resistance from junction to soldering point T
collector-base breakdown voltage
collector-emitter breakdown voltage I
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector cut-off current
collector cut-off current
DC current gain
transition frequency
collector-base capacitance
20
Fig.2 DC SOAR.
PARAMETER
40
PARAMETER
60
V CEO (V)
MBB887
80
I
I
I
I
I
see Fig.4
I
T
I
T
C
C
C
E
B
E
C
C
C
amb
amb
= 0.1 mA; I
= 0; V
= 0; V
= 0.1 mA; I
= 10 mA; I
= 10 mA; R
= 50 mA; V
= 50 mA; V
= 0; V
= 25 C; see Fig.6
= 25 C; see Fig.5
CE
CB
3
CB
= 50 V
= 50 V
handbook, halfpage
= 10 V; f = 1 MHz;
CONDITIONS
B
C
E
CE
CE
BE
= 0
s
= 0
= 0
P tot
= 10 V; T
(W)
= 100
= 10 V; f = 100 MHz;
100 C; note 1
4
3
2
1
0
0
CONDITIONS
amb
Fig.3 Power derating curve.
50
= 25 C;
100
115
95
110
3
20
0.8
MIN.
VALUE
35
1.2
2
Product specification
TYP. MAX. UNIT
150
25
BFQ235A
T s (
MBB888
100
20
o
C)
200
UNIT
K/W
V
V
V
GHz
pF
V
A
A