BFQ232 Philips Semiconductors, BFQ232 Datasheet - Page 4

• Manufacturer Part Number: BFQ232
• Description: NPN video transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
1997 Oct 02
handbook, halfpage
V
V
V
V
I
I
h
f
C
j
CES
CBO
T
FE
SYMBOL
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
= 25 C unless otherwise specified.
cb
NPN video transistors
(mA)
I C
400
300
200
100
0
0
collector-base breakdown voltage
collector-emitter breakdown voltage I
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-emitter cut-off current
collector-base cut-off current
DC current gain
transition frequency
collector-base capacitance
BFQ232
BFQ232A
BFQ232
BFQ232A
BFQ232
BFQ232A
BFQ232
BFQ232A
20
Fig.2 DC SOAR.
PARAMETER
40
60
V CEO (V)
MBB880
80
I
I
I
I
I
T
I
f = 100 MHz; T
see Fig.6
I
T
C
C
C
E
B
E
C
C
C
amb
amb
= 0.1 mA; I
= 10 mA; I
= 10 mA; R
= 0.1 mA; I
= 0; V
= 0; V
= 50 mA; V
= 50 mA; V
= 0; V
= 25 C; see Fig.4
= 25 C; see Fig.5
4
CE
CB
CB
CONDITIONS
handbook, halfpage
= 50 V
= 50 V
= 10 V; f = 1 MHz;
B
C
E
CE
CE
BE
P tot
(W)
= 0
amb
= 0
= 0
4
3
2
1
0
= 100
= 10 V;
= 10 V;
0
= 25 C;
Fig.3 Power derating curve.
50
100
115
65
95
95
110
3
20
1
0.8
BFQ232; BFQ232A
MIN.
100
35
1.4
1.2
2
TYP.
Product specification
150
T s (
100
20
MAX.
MBB895
o
C)
200
V
V
V
V
V
V
V
GHz
GHz
pF
UNIT
A
A