BFQ193 Siemens Semiconductor Group, BFQ193 Datasheet - Page 3

• Manufacturer Part Number: BFQ193
• Description: NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain
I
Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
C
C
C
C
L
CB
CE
EB
= 50 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= Z
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
Lopt
CE
CE
2)
CE
CE
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
S
S
S
= Z
= Z
= Z
L
Sopt
Sopt
= 50
A
= 25°C, unless otherwise specified.
3
Symbol
f
C
C
C
F
G
| S
T
cb
ce
eb
ma
21e
|
2
min.
-
-
-
-
-
-
-
-
-
5.5
Values
typ.
7.5
0.78
0.36
2.1
1.3
2.1
14
8
11.5
6
max.
-
-
-
-
-
-
-
-
-
1.2
Dec-13-1996
BFQ 193
Unit
GHz
pF
dB