BFG540W Philips Semiconductors, BFG540W Datasheet - Page 2

• Manufacturer Part Number: BFG540W
• Description: NPN 9 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
They are intended for applications in
the RF front end, in wideband
applications in the GHz range such as
analog and digital cellular telephones,
cordless telephones (CT2, CT3,
PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343N and SOT343R
packages.
QUICK REFERENCE DATA
1997 Dec 04
V
V
I
P
h
C
f
G
|s
F
SYMBOL
C
T
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
CBO
CES
tot
re
NPN 9 GHz wideband transistor
UM
21
|
2
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
open emitter
R
up to T
I
I
I
I
I
I
MARKING
PINNING
C
C
C
C
C
C
BFG540W
BFG540W/X
BFG540W/XR
BFG540W (see Fig.1)
BFG540W/X (see Fig.1)
BFG540W/XR (see Fig.2)
s
TYPE NUMBER
BE
= 40 mA; V
= 0; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
PIN
= 0
1
2
3
4
1
2
3
4
1
2
3
4
opt
s
; I
CB
= 85 C
C
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
= 8 V; f = 1 MHz
= 10 mA; V
CE
CE
CE
CE
CE
DESCRIPTION
= 8 V
= 8 V; f = 1 GHz; T
= 8 V; f = 900 MHz; T
= 8 V; f = 2 GHz; T
= 8 V; f = 900 MHz; T
CONDITIONS
2
CE
CODE
= 8 V; f = 2 GHz
N9
N7
N8
BFG540W/X; BFG540W/XR
amb
amb
amb
amb
= 25 C
= 25 C
page
page
= 25 C
= 25 C 14
Fig.1 SOT343N.
Fig.2 SOT343R.
Top view
60
1
3
2
Top view
MIN. TYP. MAX. UNIT
4
Product specification
120
0.5
9
16
10
15
2.1
BFG540W
MSB842
MSB014
4
1
3
2
20
15
120
500
250
V
V
mA
mW
pF
GHz
dB
dB
dB
dB