BFG505W Philips Semiconductors, BFG505W Datasheet - Page 2

• Manufacturer Part Number: BFG505W
• Description: NPN 9 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,
satellite television tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
QUICK REFERENCE DATA
1998 Oct 02
BFG505W
BFG505W/X
V
V
I
P
h
C
f
G
|S
F
TYPE NUMBER
SYMBOL
C
T
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
CBO
CES
tot
re
NPN 9 GHz wideband transistors
UM
21
|
2
collector-base voltage
collector-emitter voltage R
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
CODE
N0
N1
open emitter
T
I
I
I
I
I
I
C
C
C
C
C
C
s
s
BE
= 5 mA; V
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 0
85 C
opt
; I
CB
C
= 6 V; f = 1 MHz
= 1.25 mA; V
CE
CE
CE
CE
CE
= 6 V
= 6 V; f = 1 GHz; T
= 6 V; f = 900 MHz; T
= 6 V; f = 2 GHz; T
= 6 V; f = 900 MHz; T
CONDITIONS
2
PINNING
handbook, halfpage
CE
= 6 V; f = 2 GHz
PIN
1
2
3
4
Fig.1 Simplified outline SOT343N.
amb
amb
amb
amb
= 25 C
= 25 C
collector
base
emitter
emitter
BFG505W; BFG505W/X
= 25 C
= 25 C
BFG505W
4
1
Top view
DESCRIPTION
60
15
MIN.
Product specification
3
2
MBK523
120
0.2
9
19
12
16
1.9
TYP. MAX. UNIT
collector
emitter
base
emitter
BFG505W/X
20
15
18
500
250
V
V
mA
mW
pF
GHz
dB
dB
dB
dB