BFG505 Philips Semiconductors, BFG505 Datasheet - Page 6

• Manufacturer Part Number: BFG505
• Description: NPN 9 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1998 Oct 02
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
V
G
MSG = maximum stable gain;
G
V
G
MSG = maximum stable gain;
G
CE
CE
UM
max
UM
max
gain
(dB)
gain
(dB)
= 6 V; f = 2 GHz.
Fig.7 Gain as a function of collector current.
= 6 V; I
25
20
15
10
= maximum unilateral power gain;
= maximum unilateral power gain;
50
40
30
20
10
= maximum available gain.
= maximum available gain.
5
0
0
10
0
Fig.9 Gain as a function of frequency.
C
G UM
MSG
= 5 mA.
MSG
G UM
10
4
2
G max
10
8
3
I C (mA)
f (MHz)
G max
MRA643
MRA645
12
10
4
6
handbook, halfpage
handbook, halfpage
V
G
MSG = maximum stable gain;
G
V
CE
CE
UM
max
F min
Fig.10 Minimum noise figure and associated
(dB)
gain
(dB)
= 6 V; I
= 6 V.
= maximum unilateral power gain;
50
40
30
20
10
= maximum available gain.
0
5
4
3
2
1
0
10
10
Fig.8 Gain as a function of frequency.
1
C
available gain as functions of collector
current.
G UM
MSG
= 1.25 mA.
2000 MHz
1000 MHz
900 MHz
500 MHz
10
2
BFG505; BFG505/X
1
G ass
F min
10
I C (mA)
3
Product specification
f = 900 MHz
f (MHz)
1000 MHz
2000 MHz
MRA650
MRA644
10
10
4
20
15
10
0
G ass
5
(dB)
5