BFG21W Philips Semiconductors, BFG21W Datasheet - Page 4

• Manufacturer Part Number: BFG21W
• Description: UHF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance at T
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions: = 1 : 2;
t
1998 Jul 06
p
V
V
V
V
I
h
C
C
f
Pulsed; class-AB; < 1 : 2; t
SYMBOL
j
CES
T
FE
= 5 ms; f = 1.9 GHz at V
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
= 25 C unless otherwise specified.
c
re
UHF power transistor
MODE OF OPERATION
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
transition frequency
s
PARAMETER
60 C in a common emitter test circuit (see Figs 4 and 5).
CE
p
= 4.5 V.
= 5 ms
(GHz)
1.9
f
open emitter; I
open base; I
R
open collector; I
V
I
I
I
I
f = 700 MHz
C
E
C
C
CE
BE
= i
= 200 mA; V
= 0; V
= 200 mA; V
V
(V)
3.6
< 1 k , I
= 5 V; V
e
CE
= 0; V
4
CB
handbook, halfpage
= 3.6 V; f = 1 MHz
CONDITIONS
CB
C
BE
C
Pulsed, class-AB operation; < 1 : 2; t
f = 1.9 GHz; V
Fig.3
= 10 mA
C
= 3 V; f = 1 MHz
(dB)
= 10 mA
CE
CE
G p
= 0
E
(mA)
= 0.1 mA
16
12
I
= 0.1 mA
8
4
0
CQ
= 2 V
= 3.6 V;
1
5
Power gain and collector efficiency as a
function of the load power; typical values.
CE
= 3.6 V; I
10
(dBm)
P
26
L
CQ
15
= 1 mA; tuned at P
15
4.5
10
1
40
18
MIN.
20
p
= 5 ms.
(dB)
G p
G
C
10
p
Product specification
10
100
3
1.5
25
L
MAX.
= 26 dBm.
P L (dBm)
BFG21W
MGM220
typ. 55
30
(%)
V
V
V
V
pF
pF
GHz
80
60
40
20
0
(%)
A
UNIT
C
C