BFG135A Siemens Semiconductor Group, BFG135A Datasheet

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BFG135A

Manufacturer Part Number
BFG135A
Description
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BFG135A.pdf (6 pages)

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Part Number
Manufacturer
Quantity
Price
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Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BFG135A
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Company:
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NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For low-distortion broadband output amplifier
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
• f
Type
BFG 135A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
70mA to 130mA
S
T
S
= 6 GHz
is measured on the collector lead at the soldering point to the pcb.
100 °C
Marking Ordering Code
BFG135A Q62702-F1322
1)
1
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
Pin Configuration
1 = E
2 = B
3 = E
- 65 ... + 150
- 65 ... + 150
Values
1000
150
150
15
25
25
20
2
50
4 = C
Package
SOT-223
BFG 135A
Dec-16-1996
Unit
V
mA
mW
°C
K/W

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BFG135A Summary of contents

Page 1

... Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • GHz T ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code BFG 135A BFG135A Q62702-F1322 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency I = 100 mA 200 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

Page 4

Total power dissipation P * Package mounted on epoxy 1200 mW 1000 P tot 900 800 T A 700 600 500 400 300 200 100 Permissible Pulse Load thJS K/W ...

Page 5

Collector-base capacitance 1MHz 3.0 2.5 2.0 1.5 1.0 0.5 0 Power Gain ...

Page 6

Power Gain Parameter 15 I =100mA ...

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