2SA872 Hitachi Semiconductor, 2SA872 Datasheet - Page 2

• Manufacturer Part Number: 2SA872
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA872, 2SA872A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter
breakdown voltage
Collector cutoff current
DC current tarnsfer ratio h
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure
Note:
D
250 to 500
2
1. The 2SA872/A is grouped by h
E
400 to 800
Symbol Min
V
I
h
V
Cob
NF
CBO
T
FE1
FE2
(BR)CEO
BE
CE(sat)
*
1
2SA872
–90
—
—
250
160
—
—
—
—
—
—
FE1
Typ
—
—
—
—
—
—
—
120
1.8
—
—
Symbol
V
V
V
I
P
Tj
Tstg
C
CBO
CEO
EBO
C
as follows.
Max
—
–0.5
—
800
—
–0.75 —
–0.5
—
—
5.0
1.5
2SA872A
Min
–120
—
—
250
160
—
—
—
—
—
2SA872
–90
–90
–5
–50
300
150
–55 to +150
Typ
—
—
—
—
—
—
—
120
1.8
—
—
Max
—
—
–0.5
800
—
–0.75 V
–0.5
—
—
5.0
1.5
Unit
V
V
MHz
pF
dB
dB
2SA872A
–120
–120
–5
–50
300
150
–50 to +150
A
A
Test conditions
I
V
V
V
I
V
I
V
I
I
I
V
I
V
V
I
R
f = 1 MHz
C
C
C
C
C
B
C
C
CB
CE
CE
CE
CE
CE
CB
CE
g
= –1 mA
= –1 mA, R
= –2 mA
= –0.1 mA
= –2 mA
= –10 mA,
= –2 mA
= –50 A
= 50 k
= –75 V, I
= –100 V, I
= –12 V,
= –12 V,
= –12 V,
= –12 V,
= –25 V, I
= –6 V,
Unit
V
V
V
mA
mW
C
C
f = 10 Hz
f = 1 kHz
E
E
BE
E
= 0
= 0,
=
= 0