2SA670 Inchange Semiconductor, 2SA670 Datasheet
2SA670
Manufacturer Part Number
2SA670
Description
Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet
1.2SA670.pdf
(3 pages)
www.DataSheet4U.com
Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Inverters;converters
· Power amplification
· Switching regulator ,driver
PINNING
Absolute maximum ratings(Ta=25
SYMBOL
V
V
V
PIN
T
P
CBO
CEO
EBO
I
T
1
2
3
C
stg
C
j
Emitter
Collector;connected to
mounting base
Base
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
℃)
Open emitter
Open base
Open collector
T
C
=25℃
Fig.1 simplified outline (TO-220) and symbol
CONDITIONS
Product Specification
-55~150
VALUE
150
-50
-50
25
-5
-3
2SA670
UNIT
℃
℃
W
V
V
V
A
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2SA670 Summary of contents
Page 1
... Collector power dissipation C T Junction temperature j T Storage temperature stg www.DataSheet4U.com Fig.1 simplified outline (TO-220) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SA670 VALUE UNIT - ℃ 150 ℃ -55~150 ...
Page 2
... CONDITIONS I =-25mA , =-1mA =-1mA =-2A; I =-0. =-50V =- =-0. =-10V Product Specification 2SA670 MIN TYP. MAX UNIT - -1.0 V μA -100 μA -100 35 200 15 MHz ...
Page 3
... Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) Product Specification 3 2SA670 ...