2SA2210 Sanyo Semicon Device, 2SA2210 Datasheet - Page 2

• Manufacturer Part Number: 2SA2210
• Description: PNP Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semicon Device

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7508-002
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
--20
--18
--16
--14
--12
--10
--8
--6
--4
--2
0
0
2.55
1 2 3
10.0
Parameter
Collector-to-Emitter Voltage, V CE -- V
1.6
0.75
--0.5
1.2
2.55
3.2
I C -- V CE
--1.0
4.5
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
0.7
V (BR)CBO
V (BR)CEO
2.8
V (BR)EBO
V CE (sat)
V BE (sat)
Symbol
I CBO
I EBO
h FE
Cob
t stg
t on
f T
t f
--1.5
I B =0mA
V CB =--40V, I E =0A
V EB =--4V, I C =0A
V CE =--2V, I C =--1A
V CE =--10V, I C =- -1A
V CB =--10V, f=1MHz
I C =--7A, I B =--350mA
I C =--7A, I B =--350mA
I C =--100µA, I E =0A
I C =--1mA, R BE =∞
I E =--100µA, I C =0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IT12019
--2.0
2SA2210
Conditions
Switching Time Test Circuit
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
INPUT
50Ω
PW=20µs
D.C.≤1%
I C =20I B1 = --20I B2 = --7A
Collector-to-Emitter Voltage, V CE -- V
--0.2
V R
V BE =5V
100µF
I B1
I B2
+
R B
min
--0.4
I C -- V CE
150
--50
--50
--6
470µF
+
Ratings
V CC = --20V
typ
--200
--0.6
140
215
270
60
20
OUTPUT
R L
max
--500
--1.2
--0.8
450
--10
--10
No. A0667-2/4
I B =0mA
-- 20 m A
IT12020
MHz
Unit
mV
µA
µA
pF
ns
ns
ns
V
V
V
V
--1.0