2SA2059 Toshiba Semiconductor, 2SA2059 Datasheet - Page 4

• Manufacturer Part Number: 2SA2059
• Description: SILICON PNP EPITAXIAL TYPE
• Manufacturer: Toshiba Semiconductor

0.01
0.1
10
1
0.1
I C max (pulsed)
I C max (continuous)
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
curves must be derated linearly
with increase in temperature.
: Single nonrepetitive pulse
Ta
DC operation *
(Ta
25°C
2
Collector-emitter voltage V
). These characteristic
25°C)
1000
Safe Operating Area
100
10
0.001
1
10 ms 1 ms
1
100 s
0.01
10
CE
10 s
(V)
100 ms *
10 s *
0.1
100
Pulse width t
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm
r
th
4
– t
1
w
w
2
)
(s)
10
25°C
100
1000
2001-10-29
2SA2059