2SA1468 Hitachi Semiconductor, 2SA1468 Datasheet - Page 2

• Manufacturer Part Number: 2SA1468
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA1468
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Notes: 1. The 2SA1468 is grouped by h
Grade
Mark
h
2
FE
2. Pulse test
B
INB
100 to 200
C
INC
160 to 320
Symbol
V
V
V
h
V
V
f
Cob
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
FE
Min
–180
–180
–5
100
—
—
—
—
as follows.
Symbol
V
V
V
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
200
3.5
C
CBO
CEO
EBO
C
Max
—
—
—
320
–0.5
–1.0
—
—
Unit
V
V
V
V
V
MHz
pF
Ratings
–180
–180
–5
–100
150
150
–55 to +150
Test conditions
I
I
I
V
I
V
V
V
C
C
E
C
CE
CE
CE
CB
= –10 A, I
= –10 A, I
= –0.5 mA, R
= –30 mA, I
= –12 V, I
= –12 V, I
= –12 V, I
= –10 V, I
Unit
V
V
V
mA
mW
C
C
C
C
E
C
C
E
B
= 0
= 0
= –2 mA*
= 0, f = 1 MHz
= –2 mA
= –10 mA
= –3 mA*
BE
=
2
2