2SA1193 Hitachi Semiconductor, 2SA1193 Datasheet
2SA1193
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2SA1193 Summary of contents
Page 1
... Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2SA1193(K) 1. Emitter 2. Collector 3. Base ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current ...
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... Collector to Emiter Voltage V 100,000 30,000 10,000 3,000 1,000 300 = 0 100 –8 –10 –10 (V) CE 2SA1193(K) Area of Safe Operation –10 –30 –100 –300 ( Current Transfer Ratio vs. Collector Current – Pulse –30 – ...
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... Saturation Voltage vs. Collector Current – 500 Pulse – –1 –0.3 –0.1 –10 –30 –100 Collector Current I Switching Time Test Circuit < > < = duty ratio BE(sat) 1.0 0.3 V CE(sat) ...
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Max 0.60 Max 0.5 0.1 1.27 2.54 3.8 0.3 0.5 Hitachi Code TO-92 Mod JEDEC — EIAJ Conforms Weight (reference value) 0.35 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...