2SA1180 Inchange Semiconductor, 2SA1180 Datasheet - Page 2
2SA1180
Manufacturer Part Number
2SA1180
Description
POWER TRANSISTOR
Manufacturer
Inchange Semiconductor
Datasheet
1.2SA1180.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
h
CEsat
BEsat
CBO
EBO
FE
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
PARAMETER
I
I
I
I
I
V
V
I
C
C
E
C
C
C
CB
EB
=-25mA ;I
=-1mA ;I
=-1mA ;I
=-5A; I
=-5A; I
=-5A ; V
=-180V; I
=-6V; I
2
B
B
CONDITIONS
=-0.5A
=-0.5A
CE
C
E
C
=0
=0
=0
B
=-4V
=0
E
=0
-180
-180
MIN
Product Specification
30
-6
TYP.
2SA1180
MAX
-2.0
-2.5
-0.1
-0.1
UNIT
mA
mA
V
V
V
V
V