2SA1171 Hitachi Semiconductor, 2SA1171 Datasheet - Page 2

• Manufacturer Part Number: 2SA1171
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA1171
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
Grade
Mark
h
See characteristic curves of 2SA872.
2
FE
1. The 2SA1171 is grouped by h
D
PD
250 to 500
E
PE
400 to 800
Symbol
V
I
h
V
V
f
Cob
CBO
T
FE
(BR)CEO
BE
CE(sat)
*
1
FE
Min
–90
—
250
—
—
—
—
as follows.
Symbol
V
V
V
I
P
Tj
Tstg
Typ
—
—
—
—
—
200
1.6
C
CBO
CEO
EBO
C
Max
—
–0.5
800
–0.75
–0.5
—
—
Unit
V
V
V
MHz
pF
A
Ratings
–90
–90
–5
–50
150
150
–55 to +150
Test conditions
I
V
V
V
I
V
V
C
C
CB
CE
CE
CE
CB
= –1 mA, R
= –10 mA, I
= –75 V, I
= –12 V, I
= –12 V, I
= –12 V, I
= –25 V, I
Unit
V
V
V
mA
mW
C
C
E
C
C
C
E
BE
B
= 0
= –2 mA
= 0, f = 1 MHz
= –2 mA
= –2 mA
= –1 mA
=