2SA1166 Inchange Semiconductor, 2SA1166 Datasheet

2SA1166

Manufacturer Part Number

2SA1166

Description

POWER TRANSISTOR

Manufacturer

Inchange Semiconductor

Datasheet

1.2SA1166.pdf (3 pages)

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Download datasheet (173Kb)

Inchange Semiconductor

Silicon PNP Power Transistors

DESCRIPTION

·With MT-200 package

·High power dissipation

APPLICATIONS

·Audio and general purpose applications

PINNING (see Fig.2)

Absolute maximum ratings(Ta=25

SYMBOL

CBO

CEO

EBO

stg

Base

Collector;connected to

mounting base

Emitter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

℃)

Open base

Open collector

Open emitter

=25℃

Fig.1 simplified outline (MT-200) and symbol

CONDITIONS

Product Specification

-55~150

VALUE

-150

150

-15

-6

-5

2SA1166

UNIT

℃

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2SA1166 Summary of contents

Page 1

... Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (MT-200) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SA1166 VALUE UNIT -150 V -150 - 150 W ℃ 150 ℃ -55~150 ...

Page 2

... =-1mA ; I =0 -150 =-1mA ; =-5A ;I =-0. =-5A ;I =-0. =-150V =- =-10V Product Specification 2SA1166 TYP. MAX UNIT -2.0 V -2.5 V μA -10 μA -10 60 MHz ...

Page 3

... Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Product Specification 2SA1166 ...

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