2SA1117 Huandong, 2SA1117 Datasheet - Page 2

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2SA1117

Manufacturer Part Number
2SA1117
Description
Silicon PNP Power Transistors
Manufacturer
Huandong
Datasheet
www.DataSheet4U.com
Huandong Electronics
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
V
V
(BR)CEO
(BR)EBO
I
I
h
CEsat
CBO
EBO
f
FE
T
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
PARAMETER
I
I
I
I
V
V
I
C
E
C
C
C
CB
EB
=-50mA ;I
=-1mA ;I
=-5A; I
=-8A ; V
=-0.5A ; V
=-200V; I
=-6V; I
2
B
CONDITIONS
=-0.5A
CE
C
C
=0
=0
B
CE
=-4V
=0
E
=0
=-12V
-200
Product Specification
MIN
20
-6
TYP.
20
2SA1117
MAX
-2.0
-0.1
-0.1
UNIT
MHz
mA
mA
V
V
V

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