2SA1083 Hitachi Semiconductor, 2SA1083 Datasheet - Page 3
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2SA1083
Manufacturer Part Number
2SA1083
Description
Silicon PNP Epitaxial
Manufacturer
Hitachi Semiconductor
Datasheet
1.2SA1083.pdf
(8 pages)
Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Noise voltage reffered
to input
Note:
D
250 to 500
1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h
E
400 to 800
Symbol Min
V
V
V
I
I
V
Cob
e
CBO
EBO
T
FE
n
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
2SA1083
–60
–60
–5
—
—
250
—
—
—
—
—
Typ
—
—
—
—
—
—
—
–0.6 —
90
3.5
0.5
Max
—
—
—
–0.1
–0.1
800
–0.2
—
—
—
2SA1084
Min
–90
–90
–5
—
—
250
—
—
—
—
—
Typ Max
—
—
—
—
—
—
—
–0.6 —
90
3.5
0.5
—
—
—
–0.1
–0.1
800
–0.2
—
—
—
2SA1083, 2SA1084, 2SA1085
2SA1085
Min
–120 —
–120 —
–5
—
—
250
—
—
—
—
—
FE
as follows.
Typ Max
—
—
—
—
—
–0.6 —
90
3.5
0.5
—
—
—
–0.1
–0.1
800
–0.2
—
—
—
Unit Test conditions
V
V
V
V
V
MHz V
pF
nV/
Hz
A
A
I
I
R
I
V
V
V
I
I
I
V
I
I
V
f = 1 MHz
V
I
f = 1 kHz,
R
C
C
E
C
C
B
C
C
C
CB
EB
CE
CE
CE
CB
CE
BE
g
= –10 A, I
= –1 mA
= –10 A, I
= –1 mA,
= –2 mA
= –10 mA,
= –2 mA
= –2 mA
= –10 mA,
= 0, f = 1Hz
= –50 V, I
= –2 V, I
= –12 V,
= –12 V,
= –12 V,
= –10 V, I
= –6V,
=
C
C
E
E
E
= 0
= 0
= 0
= 0
= 0,
3