SLD432S ETC, SLD432S Datasheet - Page 2

• Manufacturer Part Number: SLD432S
• Description: Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output
• Manufacturer: ETC

Figure 1 SLD432S Representative Characteristics
Figure 3 SLD432S Package Dimensions
Figure 2 SLD432S Chip Structure
emitting point
Laser beam
50
40
30
20
10
0
0
M3
CW drive
Tc = 25 C
15
24.9 0.2
10 0.2
Light-current
17.8
5.5
100 m
15
If [A]
30
45
3-cross-recessed head
Machine screws (M2)
P-side electrode
2- 3.2
2 depth4
60
LD chip
N-side electrode
Active layer
GaAs substrate
1.0
0.8
0.6
0.4
0.2
0.0
(10.3)
–40
CW drive
Tc = 25 C
Po = 40 W
9
8
LD (–)
7
6
(Unit: mm)
4.7 0.1
–20
Far field pattern
LD (+)
Angle [deg.]
0
20
//
40
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation
angle
Differential efficiency
Table 1 SLD432S Main Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
Item
Parallel to
junction
Perpendicular
to junction
790
CW drive
Tc = 25 C
Po = 40 W
800
Wavelength [nm]
Spectrum
Symbol
Ith
Iop
Vop
810
p
//
D
Typical value
820
Conditions: TC = 25 C
808
1.9
1.2
13
50
24
8
830
Po =40 W@CW
Unit
deg.
W/A
nm
A
V