SLD302B Sony Corporation, SLD302B Datasheet - Page 3
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SLD302B
Manufacturer Part Number
SLD302B
Description
Block-type 200mW High Power Laser Diode
Manufacturer
Sony Corporation
Datasheet
1.SLD302B.pdf
(7 pages)
Example of Representative Characteristics
200
100
830
820
810
800
790
780
Oscillation wavelength vs. Temperature characteristics
0
–10
0
–30
(parallel to junction)
Optical power output vs. Forward current
Power dependence of far field pattern
0
–20
Tc – Case temperature [ C]
I
Tc = 0 C
F
– Forward current [mA]
10
–10
Tc = –10 C
Angle [degree]
250
20
0
Tc = 50 C
10
30
Tc = 25 C
P
P
P
O
O
O
P
= 180mW
= 90mW
= 30mW
O
20
Tc = 25 C
= 180mW
40
30
500
50
– 3 –
1000
500
100
1.5
1.0
0.5
Differential efficiency vs. Temperature characteristics
0
–10
Threshold current vs. Temperature characteristics
Power depecdence of near field pattern
–10
0
0
Tc – Case temperature [ C]
Tc – Case temperature [ C]
10
50 m
10
20
20
30
P
P
P
P
P
P
30
O
O
O
O
O
O
40
Tc = 25 C
= 150mW
= 100mW
= 75mW
= 50mW
= 25mW
= 180mW
50
40
SLD302B
50