3SK309 Hitachi Semiconductor, 3SK309 Datasheet
3SK309
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3SK309 Summary of contents
Page 1
... GaAs N Channel Dual Gate MES FET Features Capable of low voltage operation (V Excellent low noise characteristics (NF = 1.25 dB typ 900 MHz) High power gain (PG = 21.0 dB typ 900 MHz) Outline CMPAK–4 3SK309 UHF RF Amplifier = 1 Source 4 2. Gate1 3 ...
Page 2
... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Gate 1 to cutoff current Gate 2 to cutoff current Gate 1 to source cutoff voltage V ...
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... Drain to Source Voltage –2.0 –1.6 –0.4 0 (V) Gate2 to Source Voltage V G1S 3SK309 –0.4 V –0.6 V –0.5 V Pulse Test –0.7 V –0.8 V –0 –1 V G1S (V) DS Drain Current vs. Gate2 to Source Voltage 0 V –0.2 V – ...
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... Forward Transfer Admittance vs. Gate1 to Source Voltage 100 kHz 80 60 –0.2 V –0 –0 –0 –1 V G2S 0 –2.0 –1.6 –1.2 Gate1 to Source Voltage V Power Gain vs. Drain Current Drain Current 4 100 ...
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... Drain to Source Voltage fixed = –1.5 –1.0 –0.2 0 (V) Gate2 to Source Voltage V G2S 3SK309 Noise Figure vs. Drain to Source Voltage G2S f = 900 MHz (V) DS Gain Reduction vs. Gate2 to Source Voltage V is fixed ...
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... S11 Parameter vs. Frequency 1 –.2 –.4 –.6 –1.5 –.8 –1 Test Condtion 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90 120 150 180 –150 –120 –90 Test Condtion ...
Page 7
... S22 ANG MAG ANG 95.2 0.963 –0.9 89.0 0.963 –2.2 80.5 0.961 –3.5 83.7 0.959 –5.0 80.8 0.957 –6.3 78.1 0.955 –8.0 76.9 0.953 –9.2 77.1 0.949 –10.6 73 ...
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... max L2 Input ( copper wire RFC : 3 turn inside dia ( 1 mm enameled copper wire) 8 Power Gain, Noise Figure Test Circuit V G2 1000 RFC 1000 120 V D Unit : Resistance ( ) ...
Page 9
... Package Dimentions 2.0 0.2 1.3 0.65 0.65 + 0.1 0.3 – 0. 0.1 0.3 – 0.05 0.65 0.6 1.25 0.16 + 0.1 0.3 – 0. 0.1 + 0.1 0.4 – 0.05 3SK309 Unit 0.1 – 0.06 CMPAK-4 Hitachi code EIAJ JEDEC 9 ...
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... No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. This product must not be placed in the mouth contains toxic substances that may cause poisoning. ...
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... Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor Hitachi Europe GmbH (America) Inc. Electronic components Group 179 East Tasman Drive, Dornacher Straße 3 San Jose,CA 95134 D-85622 Feldkirchen, Munich Tel: < ...