3SK296 Hitachi Semiconductor, 3SK296 Datasheet - Page 4

• Manufacturer Part Number: 3SK296
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK296
4
30
24
18
12
5
4
3
2
1
0
6
0
1
V
f = 1 kHz
Gate1 to source voltage V
DS
Forward Transfer Admittance vs.
Noise Figure vs. Drain Current
0.4
= 6 V
Drain current
Gate1 to Source Voltage
2
0.5 V
0.8
1.0 V
V
5
G2S
1.5 V
1.2
I
V
V
f = 900 MHz
D
2.0 V
= 3.0 V
G2S
DS
(mA)
10
= 4 V
G1S
1.6
= 3 V
2.5 V
(V)
2.0
20
25
20
15
10
25
20
15
10
5
5
0
0
1
Power Gain vs. Drain to Source Voltage
Drain to source voltage
Power Gain vs. Drain Current
2
Drain current
2
4
5
6
I
V
V
f = 900 MHz
V
I
f = 900 MHz
D
G2S
G2S
D
DS
(mA)
= 10 mA
V
10
= 4 V
DS
= 3 V
= 3 V
8
(V)
10
20