3SK290 Hitachi Semiconductor, 3SK290 Datasheet
3SK290
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3SK290 Summary of contents
Page 1
... Silicon N-Channel Dual Gate MOS FET Application UHF RF amplifier Features · Low noise figure 2.3 dB Typ 900 MHz · High gain 19.3 dB Typ 900 MHz Outline CMPAK–4 3SK290 Source 4 2. Gate1 3. Gate2 4. Drain ADE-208-271 1st. Edition ...
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... Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Attention: This device is very sensitive to electro static discharge recommended to adopt appropriate cautions when handling this transistor. ...
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... G1S(off) 0 — +1.0 G2S(off — fs Ciss 1.2 1.8 2.2 Coss 0.7 1.2 1.4 Crss — 0.02 0. 19.3 — NF — 2.3 2.8 3SK290 Unit Test conditions = 200 mA – G1S V = –3 V G2S = ±10 mA G2S DS = ±10 mA G1S DS = ± G1S G2S DS = ± ...
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... Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Drain Current vs. Gate 1 to Source Voltage 20 3 2 G2S 4 0 0.8 1.6 Gate 1 to Source Voltage 150 200 0 Ta (¡ 1 ...
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... Gate1 to Source Voltage Power Gain vs. Drain Current 2 1.5 (V) Drain Current G1S Noise Figure vs. Drain Current G2S f = 900 MHz Drain Current I (mA) D 3SK290 G2S f = 900 MHz (mA ...
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... S11 Parameter vs. Frequency 1.0 1 –.2 –.4 –.6 –1.5 –.8 –1 Condition 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90¡ 120¡ 150¡ 180¡ –150¡ –120¡ –90¡ ...
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... S22 ANG. MAG. ANG. 41.3 0.971 –1.9 88.9 0.971 –4.5 74.4 0.970 –7.1 81.6 0.969 –9.8 79.7 0.967 –12.1 72.6 0.965 –14.8 66.9 0.962 –17.3 70.9 0.959 –19.7 67 ...
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Hitachi Code JEDEC EIAJ Weight (reference ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...