BLF547 Philips Semiconductors, BLF547 Datasheet - Page 2

• Manufacturer Part Number: BLF547
• Description: UHF push-pull power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A2
QUICK REFERENCE DATA
RF performance at T
October 1992
CW, class-B
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
Designed for broadband operation.
UHF push-pull power MOS transistor
PIN
1
2
3
4
5
MODE OF OPERATION
drain 1
drain 2
gate 1
gate 2
source
DESCRIPTION
h
= 25 C in a push-pull common-source test circuit.
halfpage
PIN CONFIGURATION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
(MHz)
500
f
Top view
5
3
1
2
V
(V)
28
DS
Fig.1 Simplified outline and symbol.
4
2
MSB008
5
WARNING
CAUTION
100
(W)
P
L
(dB)
g 2
g 1
G
10
P
Product specification
MBB157
BLF547
d 2
d 1
s
(%)
50
D