BLF522 Philips Semiconductors, BLF522 Datasheet - Page 4

• Manufacturer Part Number: BLF522
• Description: UHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
September 1992
handbook, halfpage
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
fs
(BR)DSS
GS(th)
= 25 C unless otherwise specified.
DS(on)
is
os
rs
UHF power MOS transistor
SYMBOL
V
Fig.4
(mV/K)
DS
T.C.
= 10 V.
25
15
5
5
10
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
10
2
PARAMETER
10
3
I D (mA)
MRA254
10
4
V
V
I
I
I
V
V
V
V
D
D
D
V
GS
GS
GS
GS
GS
GS
GS
= 50 mA; V
= 0.7 A; V
= 0.7 A; V
= 0; I
= 0; V
= 0; V
= 0; V
= 0; V
= 15 V; V
= 20 V; V
4
handbook, halfpage
D
CONDITIONS
DS
DS
DS
DS
= 5 mA
V
Fig.5
DS
DS
GS
= 12.5 V
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
DS
DS
DS
= 10 V; T
(A)
I D
= 10 V
= 15 V
3
2
1
0
= 10 V
= 10 V
0
= 0
Drain current as a function of gate-source
voltage, typical values.
j
= 25 C.
4
8
40
2
200
MIN.
12
270
1.8
2.3
14
17
3
TYP. MAX. UNIT
Product specification
16
V GS (V)
BLF522
MRA249
0.5
1
4.5
2.7
20
V
mA
V
mS
A
pF
pF
pF
A