BLF2022-90 Philips Semiconductors, BLF2022-90 Datasheet - Page 4

• Manufacturer Part Number: BLF2022-90
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
2003 Feb 24
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.2
V
f
(1) I
(2) I
Fig.4
1
1
DS
DS
= 2170 MHz; f
= 2170 MHz; f
(dB)
(dB)
G p
G p
= 28 V; I
= 28 V; T
15
14
13
12
11
10
15
14
13
12
11
10
DQ
DQ
0
0
= 900 mA.
= 750 mA.
G p
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
DQ
(2)
h
= 25 C;
= 750 mA; T
2
2
(1)
(3)
= 2170.1 MHz.
= 2170.1 MHz.
(3) I
(4) I
40
40
(5)
(4)
DQ
DQ
h
= 25 C;
(6)
= 600 mA.
= 600 mA.
80
80
P L (PEP) (W)
P L (PEP) (W)
(5) I
(6) I
DQ
DQ
G p
MLD839
D
D
= 750 mA.
= 900 mA.
MLD837
120
120
50
40
30
20
10
0
50
40
30
20
10
0
(%)
(%)
D
D
4
handbook, halfpage
handbook, halfpage
V
f
Fig.3
V
f
(1) I
Fig.5
1
1
DS
DS
= 2170 MHz; f
= 2170 MHz; f
(dBc)
(dBc)
d im
d im
= 28 V; I
= 28 V; T
20
40
60
80
20
40
60
80
DQ
0
0
0
0
= 600 mA.
Intermodulation distortion as a function of
peak envelope load power; typical values.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
DQ
h
= 25 C;
= 750 mA; T
2
2
= 2170.1 MHz.
= 2170.1 MHz.
(1)
(2)
(3)
(2) I
40
40
DQ
h
= 25 C;
= 900 mA.
80
80
BLF2022-90
Product specification
P L (PEP) (W)
P L (PEP) (W)
(3) I
d 3
d 5
d 7
DQ
MLD838
MLD840
= 750 mA.
120
120