NE3508M04 California Eastern Labs, NE3508M04 Datasheet - Page 3

• Manufacturer Part Number: NE3508M04
• Description: HETERO JUNCTION FIELD EFFECT TRANSISITOR
• Manufacturer: California Eastern Labs

www.DataSheet4U.com
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
www.DataSheet4U.com
0
0
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
TYPICAL CHARACTERISTICS T
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
f=2GHz, VDS=2V
NFmin
Note) Under examination
10
vs. DREIN CURRENT
Ga
Drein Current ID (mA)
5
NFmin
frequency (GHz)
vs. FREQUENCY
Mounted on Glass Epoxy PCB
(1.08 cm
20
2
x 1.0mm(t) )
VDS=2V, ID=10mA
10
Ga
30
A
40
15
= +25 °C)
20
18
16
14
12
10
8
6
4
2
0
20
18
16
14
12
10
8
6
4
2
0
100
90
80
70
60
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
10
8
6
4
2
1.0
0
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
0
DRAIN CURRENT vs. GATE to SOURCE VOLTAGE
f=2GHz, ID=10mA
V
DS
=2V
NFmin
1.5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
1
vs. Drein to Source Voltage
Drain to Source Voltage VDS
2.0
2
2.5
3
NE3508M04
Ga
VGS = 0 V
3.0
4
- 0.2 V
- 0.3 V
- 0.1 V
- 0.4 V
- 0.5 V
5
3.5
20
18
16
14
12
10
8
6
4
2
0