ATF-13736-TR1 Agilent(Hewlett-Packard), ATF-13736-TR1 Datasheet
ATF-13736-TR1
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ATF-13736-TR1 Summary of contents
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... Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”. Description The ATF-13736 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropri- ate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range ...
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... Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel ATF-13736-TR1 1000 ATF-13736-STR ATF-13736 Noise Parameters: Freq GHz dB 4.0 1.1 6.0 1.3 8.0 1.5 12.0 1.8 14.0 2.1 ATF-13736 Typical Performance, T ...
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Typical Scattering Parameters, Freq GHz Mag. Ang. 2.0 .94 -46 11.0 3.0 .86 -70 10.2 4.0 .84 -90 5.0 .77 -110 6.0 .68 -135 7.0 .59 -170 8.0 .54 149 9.0 .56 112 10.0 .58 86 11.0 .60 ...
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Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 1 GATE 0.508 (0.020) SOURCE 2 1.45 0.25 2.54 (0.057 0.010) 0.15 0.05 (0.100) (0.006 0.002) 0.56 4.57 0.25 (0.022) 0.180 0.010 Notes: 1. Dimensions are in ...