BF583 Philips Semiconductors, BF583 Datasheet - Page 3

• Manufacturer Part Number: BF583
• Description: NPN high-voltage transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
1996 Dec 09
V
V
V
I
I
I
P
T
T
T
R
R
I
I
h
V
C
C
f
SYMBOL
SYMBOL
SYMBOL
j
C
CM
BM
CBO
EBO
T
FE
stg
j
amb
CBO
CEO
EBO
tot
= 25 C unless otherwise specified.
CEsat
NPN high-voltage transistors
th j-a
th j-mb
c
re
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
feedback capacitance
transition frequency
BF583
BF585
BF587
BF583
BF585
BF587
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
in free air; T
in free air; T
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
E
C
C
= 0; V
= 0; V
= i
= 0; V
= 25 mA; V
= 40 mA; V
= 30 mA; I
= i
= 10 mA; V
e
c
= 0; V
= 0; V
CB
CB
EB
3
CONDITIONS
CONDITIONS
= 300 V
= 250 V; T
= 5 V
amb
mb
CB
CE
B
CE
CE
CE
= 5 mA
= 30 V; f = 1 MHz
= 30 V; f = 1 MHz
= 20 V
= 20 V
= 10 V
25 C
25 C
j
= 150 C
BF583; BF585; BF587
50
50
20
70
65
65
MIN.
MIN.
VALUE
78
25
Product specification
300
350
400
250
300
350
5
100
50
1.6
5
+150
150
+150
20
20
100
600
2.5
1.8
110
MAX.
MAX.
UNIT
K/W
K/W
V
V
V
V
V
V
V
mA
mA
mA
W
W
nA
nA
mV
pF
pF
MHz
C
C
C
A
UNIT
UNIT