BF547 Philips Semiconductors, BF547 Datasheet - Page 4

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BF547

Manufacturer Part Number
BF547
Description
NPN 1 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
I
Fig.4
V
Fig.6
E
CE
= i
G UM
(dB)
(pF)
C re
1.6
0.8
e
40
30
20
10
= 10 V; f = 100 MHz.
0
0
= 0; f = 1 MHz.
0.1
0
Feedback capacitance as a function of
collector-base voltage
Maximum unilateral power gain as a
function of collector current.
10
1
20
10
V CB (V)
I C (mA)
MBB474
MBB407
100
30
4
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
CE
CE
(GHz)
G UM
(dB)
f T
1.4
1.0
0.6
0.2
= 10 V; f = 500 MHz.
= 10 V; I
50
40
30
20
10
10
10
0
10
1
Transition frequency as a function of
collector current.
Maximum unilateral power gain as a
function of frequency.
C
= 15 mA.
10
2
1
10
10
3
Product specification
I C (mA)
f (MHz)
MBB408
MBB399
BF547
10
10
2
4

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