BF987 Siemens Semiconductor Group, BF987 Datasheet
BF987
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BF987 Summary of contents
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Silicon N Channel MOSFET Triode For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability Type Marking BF 987 – Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation ˚C ...
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Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC Characteristics Drain-source breakdown voltage = 10 A, – Gate-source breakdown voltage = 10 mA ...
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Total power dissipation P tot Gate transconductance mA kHz V DS DSS = Output characteristics Drain current ...
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Gate input capacitance C gss = mA MHz V DS DSS Reverse transfer capacitance mA MHz, V DSS Output capacitance ...
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Gate forward transfer admittance DSS (common source) Test circuit for power gain and noise figure f = 200 MHz Output admittance y 21s = 10 V, ...