BF964S Vishay Telefunken, BF964S Datasheet

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BF964S

Manufacturer Part Number
BF964S
Description
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
Manufacturer
Vishay Telefunken
Datasheet

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
BF964S Marking: BF964S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm
Document Number 85003
Rev. 3, 20-Jan-99
D
D
D
amb
amb
2
94 9307
Integrated gate protection diodes
High cross modulation performance
Low noise figure
Parameter
= 25
= 25
3
_
_
C, unless otherwise specified
C, unless otherwise specified
1
Parameter
4
plated with 35
96 12647
m
m Cu
Test Conditions
Test Conditions
T
amb
60 ° C
G
G
12623
D
D
D
Electrostatic sensitive device.
Observe precautions for handling.
2
1
High AGC-range
Low feedback capacitance
Low input capacitance
Type
3
www.vishay.de FaxBack +1-408-970-5600
Symbol
R
Symbol
I
thChA
G1/G2SM
V
T
P
T
I
stg
DS
Ch
D
tot
Vishay Telefunken
–55 to +150
Value
450
Value
200
150
20
30
10
BF964S
D
S
Unit
mW
Unit
K/W
mA
mA
° C
° C
V
1 (8)

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BF964S Summary of contents

Page 1

... D Integrated gate protection diodes D High cross modulation performance D Low noise figure 9307 96 12647 1 BF964S Marking: BF964S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 Absolute Maximum Ratings unless otherwise specified amb Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current ...

Page 2

... G2S G1S G2S G1S BF964S G1S G1S G2S G2S BF964SA BF964SB –V G2S –V G1S unless otherwise specified amb Test Conditions = 4 V G2S = 0.5 mS 200 MHz L = 0.5 mS 200 MHz ...

Page 3

... Figure 5. Gate 1 Input Capacitance vs. Drain Current 2. 1.75 G2S 1. 1.25 3V 1.00 2V 0.75 1V 0.50 0V 0.25 – 12766 Figure 6. Output Capacitance vs. Drain Source Voltage BF964S Vishay Telefunken G1S = 15V – – Gate 2 Source Voltage ( V ) G2S =15V = – ...

Page 4

... BF964S Vishay Telefunken 4.0 3.6 V =15V G1S 3.2 f=1MHz 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 –3 –2 – – Gate 2 Source Voltage ( V ) 12767 G2S Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage 10 f= 200MHz 0 –10 –20 –30 –40 –50 –60 V G2S –70 –5 –4 –3 –2 – – ...

Page 5

... =5mA D 1000MHz 5 700MHz 4 3 400MHz 2 V =15V G2S 100MHz f=100...1300MHz 0 0 0.5 1.0 1 12773 22 Figure 13. Short Circuit Output Admittance Document Number 85003 Rev. 3, 20-Jan-99 =10mA D 20mA =4V 2.0 2.5 BF964S Vishay Telefunken www.vishay.de FaxBack +1-408-970-5600 5 (8) ...

Page 6

... BF964S Vishay Telefunken mA j0.5 j0.2 0 0.2 0 1300MHz –j0.2 1000 700 –j0.5 12 924 –j Figure 14. Input reflection coefficient 120 700 400 1000 150 100 180 0.8 –150 –120 –90 12 926 Figure 15. Forward transmission coefficient www.vishay.de FaxBack +1-408-970-5600 ...

Page 7

... Dimensions in mm Document Number 85003 Rev. 3, 20-Jan-99 BF964S Vishay Telefunken 96 12242 www.vishay.de FaxBack +1-408-970-5600 7 (8) ...

Page 8

... BF964S Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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