BF9024SPD-M BYD, BF9024SPD-M Datasheet

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BF9024SPD-M

Manufacturer Part Number
BF9024SPD-M
Description
P-Channel MOSFET and Schottky Diode
Manufacturer
BYD
Datasheet
1.BF9024SPD-M.pdf (6 pages)

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www.DataSheet.in
BYD Microelectronics Co., Ltd
General Description
The BF9024SPD-M uses advanced trench technology to
Provide excellent R
This device is suitable for used as a load switch or in
PWM applications.
Features
MOSFET
Schottky Diode
Absolute Maximum Ratings (Ta = 25 )
Note a. Mounted on FR4 Board of 1”x1”.
Caution: These values must not be exceeded under any conditions.
Ordering Information
Datasheet
Parameter
Mosfet
Drain to Source Voltage
(MOSFET and Schottky)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Maximun Power Dissipation
Channel Temperature
Storage Temperature
Schottky Diode
Reverse Voltage
Average Forward Current
Pulsed Forward Current
Maximun Power Dissipation
Storage Temperature
V
I
Low on-state resistance
R
R
V
BF9024SPD-M
DFNWB3*1.8-8L
D
DS
F
DS (on)
DS (on)
= -2.7A
=0.42V
(V) = -20V
< 90mΩ . (V
< 120mΩ .(V
DS (ON)
GS
GS
and low gate charge.
a
a
= -4.5V)
= -2.5V)
Symbol
V
V
I
I
P
T
T
V
I
I
P
T
D(DC)
D(pulse)
F
FM
ch
stg
stg
DSS
GSS
D
KA
D
ES-BYD-WDZCE03D-070 Rev.A/1
P-Channel MOSFET and Schottky Diode
-55~+150
-55~+150
Ratings
0.96
-2.7
150
-20
-10
1.1
±8
20
℃
1
7
Unit
W
℃
℃
W
℃
V
V
A
A
V
A
A
BF9024SPD-M
1,2 Anode; 3 Source; 4 Gate
5,6 Drain; 7,8 Kathode
8
1
K: Kathode;D: Drain
K
7
2
6
3
D
Page 1of 6
5
4

BF9024SPD-M Summary of contents

Page 1

... BYD Microelectronics Co., Ltd General Description The BF9024SPD-M uses advanced trench technology to Provide excellent R DS (ON) This device is suitable for used as a load switch or in PWM applications. Features MOSFET V (V) = -20V -2.7A D Low on-state resistance R < 90mΩ (on) R < 120mΩ .(V ...

Page 2

... - =-0.9A,V F(S- =0. =20V =10V 110 T ( ℃ ) 150 j ES-BYD-WDZCE03D-070 Rev.A/1 BF9024SPD-M Min. Typ. =0V — — 0.25mA -0.45 — -2A 7 — -2A 73 — -2A 99 — D 427 — =0,f=1MHZ — — ...

Page 3

... Datasheet www.DataSheet. 110 T ( ℃ ) 150 J V =-2. =-4. 110 T ( ℃ ) 150 ES-BYD-WDZCE03D-070 Rev.A/1 BF9024SPD-M Figure 4 I vs. Temperature GSS 0.15 I GSS (-uA) 0. 0.03 GSS -0. GSS -0.09 -0.15 -50 - Figure 6 On-Resistance vs. Drain Current 140 R DS(on) (mΩ) 120 V =-2.5V GS 100 80 V =-4 ...

Page 4

... Datasheet www.DataSheet.in Figure 10 Capacitance Q (nC =10V 120 150 T ( ℃ ( ES-BYD-WDZCE03D-070 Rev.A/1 BF9024SPD-M 600 C(pF) C iss 480 360 240 C oss 120 C rss Schottky Diode Figure 12 Forward Voltage Diode =150 ℃ =25 ℃ ...

Page 5

... A 0.750 0.700 0.013-0.050 ES-BYD-WDZCE03D-070 Rev.A/1 BF9024SPD-M 0.650 Bsc PIN # IDENTIFICATION CHAMFER 0.150 X 45º 1.950 Ref BOTTOM VIEW 0.203 Ref. SIDE VIEW ...

Page 6

... BME is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Datasheet www.DataSheet.in ES-BYD-WDZCE03D-070 Rev.A/1 BF9024SPD-M Page 6of 6 ...

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