HMPS8099 Hi-Sincerity Mocroelectronics, HMPS8099 Datasheet

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HMPS8099

Manufacturer Part Number
HMPS8099
Description
NPN SILICON TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HMPS8099
NPN SILICON TRANSISTOR
Description
HMPS8099 is designed for general purpose amplifier applications.
Features
Absolute Maximum Ratings
Characteristics
Storage Temperature ............................................................................................ -55 ~ +125 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCES Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Low Collector-Emitter Saturation Voltage
HMPS8099 is complementary to HMPS8599
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VCE(sat)1
*VCE(sat)2
VBE(on)
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
*hFE3
ICBO
ICEO
IEBO
Min.
100
100
0.6
80
80
75
6
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
100
100
100
300
0.4
0.3
0.8
-
-
-
-
-
Unit
nA
nA
nA
V
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
VCE=60V, IB=0
IC=1mA, VCE=5V
IC=100mA, IB=5mA
IC=100mA, IB=10mA
IC=10mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
Test Conditions
Spec. No. : HE6318-A
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification

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HMPS8099 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPS8099 NPN SILICON TRANSISTOR Description HMPS8099 is designed for general purpose amplifier applications. Features Low Collector-Emitter Saturation Voltage HMPS8099 is complementary to HMPS8599 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +125 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 V 100 10 0 Collector Current (mA) On Voltage & Collector Current 10000 1000 V (on 100 0 Collector Current (mA) Capacitance ...

Page 3

HI-SINCERITY MICROELECTRONICS CORP. PD-Ta 700 600 500 400 300 200 100 100 Ambient Temperature-Ta( 120 140 160 o C) Spec. No. : HE6318-A Issued Date : 1996.07.18 Revised Date : 2000.10.01 Page No. : ...

Page 4

HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension Inches DIM Min. Max. A 0.1704 0.1902 B 0.1704 0.1902 C 0.5000 - D 0.0142 0.0220 E - *0.0500 F 0.1323 0.1480 Notes : ...

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