2N2905AL Semicoa Semiconductor, 2N2905AL Datasheet - Page 2

• Manufacturer Part Number: 2N2905AL
• Description: Chip Type 2C2907A Geometry 0600 Polarity PNP
• Manufacturer: Semicoa Semiconductor

OFF Characteristics
Collector-Base Breakdown Voltage
I
Collector-Emitter Breakdown Voltage
I
Emitter-Base Breakdown Voltage
I
Collector-Emitter Cutoff Current
V
Collector-Base Cutoff Current
V
Emitter-Base Cutoff Current
V
ON Characteristics
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance, Output Open Circuited
Switching Characteristics
Saturated Turn On Switching Time to 90%
Saturated Turn Off Switching Time to 10%
C
C
E
CE
CB
EB
= 10 µA
= 10 mA
= 10 µA
= 30 V
= 50 V
= 3.5 V
I
I
I
I
I
I
I
I
I
I
V
V
16V, 50 ohm input pulse
16V, 50 ohm input pulse
C
C
C
C
C
C
C
C
C
C
CB
EB
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 100 µA, V
= 1.0 mA, V
= 150 mA, I
= 500 mA, I
= 500 mA, I
= 1 mA, V
= 2.0 V, I
= 10 V, I
CE
E
C
CE
B
B
B
B
CE
CE
= 0 V, 100 kHz < f < 1 MHz
CE
CE
= 0, 100 kHz < f < 1 MHz
= 10 V, f = 1kHz
= 15 mA (pulse test)
= 15 mA (pulse test)
= 50 mA (pulse test)
= 50 mA (pulse test)
= 10 V
= 10 V
= 10 V
= 10 V (pulse test)
= 10 V (pulse test)
T
C
Electrical Characteristics
= 25
o
C unless otherwise specified
Symbol
Symbol
Symbol
Symbol
V
V
V
V
V
V
V
AC h
C
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
C
h
h
h
h
h
I
I
I
t
t
CBO
CES
EBO
OFF
OBO
ON
FE1
FE2
FE3
FE4
FE5
IBO
FE
Data Sheet No. 2N2905AL
Min
Min
Min
Min
100
100
100
100
5.0
60
60
---
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---
75
50
---
---
---
---
---
---
---
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Typ
Typ
Typ
Typ
0.25
0.18
0.87
100
225
250
180
250
200
9.0
1.0
0.1
0.5
1.0
6.0
8.0
70
80
25
---
Max
Max
Max
Max
450
300
300
0.4
1.6
1.3
2.6
8.0
50
10
50
30
45
---
---
---
---
---
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Unit
Unit
Unit
Unit
V dc
V dc
V dc
V dc
nA
nA
nA
pF
pF
---
---
---
---
---
---
ns
ns
V
V
V