2N222 Motorola, 2N222 Datasheet - Page 2

• Manufacturer Part Number: 2N222
• Description: Amplifier Transistors
• Manufacturer: Motorola

P2N2222A
1. Pulse Test: Pulse Width
2. f T is defined as the frequency at which |h fe | extrapolates to unity.
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
SMALL– SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
2
DC Current Gain
Collector – Emitter Saturation Voltage (1)
Base – Emitter Saturation Voltage (1)
Current – Gain — Bandwidth Product (2)
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small–Signal Current Gain
Output Admittance
Collector Base Time Constant
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I C = 0.1 mAdc, V CE = 10 Vdc)
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc, T A = –55 C)
(I C = 150 mAdc, V CE = 10 Vdc) (1)
(I C = 150 mAdc, V CE = 1.0 Vdc) (1)
(I C = 500 mAdc, V CE = 10 Vdc) (1)
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
(I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 10 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I E = 20 mAdc, V CB = 20 Vdc, f = 31.8 MHz)
(I C = 100
m
Adc, V CE = 10 Vdc, R S = 1.0 k , f = 1.0 kHz)
(V CC = 30 Vdc, V BE(off) = –2.0 Vdc,
(V CC = 30 Vdc, V BE(off) = –2.0 Vdc,
I C = 150 mAdc, I B1 = 15 mAdc) (Figure 1)
I C = 150 mAdc, I B1 = 15 mAdc) (Figure 1)
(V CC = 30 Vdc, I C = 150 mAdc,
I B1 = I B2 = 15 mAdc) (Figure 2)
I B1 = I B2 = 15 mAdc) (Figure 2)
v
300
m
s, Duty Cycle
Characteristic
(T A = 25 C unless otherwise noted) (Continued)
v
2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
V CE(sat)
V BE(sat)
Symbol
C obo
rb C c
C ibo
h FE
h oe
h ie
h re
h fe
N F
f T
t d
t s
t r
t f
0.25
Min
100
300
0.6
2.0
5.0
35
50
75
35
50
40
50
75
25
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
1.25
300
300
375
200
150
225
0.3
1.0
1.2
2.0
8.0
8.0
8.0
4.0
4.0
25
35
10
25
60
—
—
—
—
—
—
—
X 10 – 4
m
MHz
Unit
mhos
Vdc
Vdc
k
dB
pF
pF
ps
ns
ns
ns
ns
—
—