LM302-1L Datatronic Distribution, Inc., LM302-1L Datasheet
LM302-1L
Manufacturer Part Number
LM302-1L
Description
Telecom Transformer
Manufacturer
Datatronic Distribution, Inc.
Datasheet
1.LM302-1L.pdf
(1 pages)
FEATURES
• Subminature, Low Profile
• Vacuum encapsulated
• Meets or exceeds requirements of most international safety standards
• Operating Temperature -20ºC to +85ºC, Storage Temperature -40ºC to +85º C
APPLICATIONS
• V.32, V.32 bis and V.34 MODEMS
•
ELECTRICAL SPECIFICATIONS AT 25°C
IMPEDANCE
TURNS RATIO
INSERTION LOSS @2KHz (MAX)
FREQUENCY RESPONSE @200-3500Hz (MAX)
WIDE BAND RESPONSE @200-10 000Hz (MAX)
RETURN LOSS @200-4000Hz (MIN)
LONGITUDINAL BALANCE (MIN)
DISTORTION @ 1kHz 0 dBM
Note : * For use with recommended circuit (BS6305 impedance Class A non-speech or Class B speech)
OUTLINE DIMENSIONS:
RECOMMENDED CIRCUITS
600 Ohm Matching (speech)
DATATRONIC:
TELECOMMUNICATIONS
L IN E
** LM302-1L Is symmetrical meaning there is no real primary or secondary winding.
6 0 0 Ω
28151 Highway 74, Romoland, CA 92585 Tel: 951-928-7700, Toll Free Tel: 888-889-5391, Fax: 951-928-7701
499 King’s Road, Hong Kong
6 .8 µF ± 5 %
PRIMARY
SECONDARY
2 7 n F ± 5 %
TYP
3.0
5.08
TYP
1
8
DATATRONIC
LM 302-1L
17.9
7.62
DATE
All specifications are subject to change without notice.
MAX
1 : 1 ID E A L
4
5
10.7 MAX
MAX
E-Mail: ddisales@datatronics.com
17.9
5.08
TYP
Tel: (852) 2562 3858, (852) 2564 84 77 Fax: (852) 2565 7214, (852) 2563 1290
TYP
3 3 n F ± 5 %
3.0
Dia 0.6 typ (4X)
-2.5 dB
-0.3 dB
1.5 dB
≤0.1%
600 Ω
600 Ω
21 dB
80 dB
1 : 1
• 10.7mm seated Height
• Tested at 6500 VDC
• INSTRUMENTATION
4.0 MIN
5 6 0 Ω
± 2 %
TELECOM TRANSFORMER LM302-1L
SHUNT INDUCTANCE (MIN)
SHUNT LOSS (TYP)
LEAKAGE INDUCTANCE (TYP) @1KHz
INSULATION RESISTANCE @500VDC (MIN)
DIELECTRIC STRENGTH
DC RESISTANCE** (± 10%) PRIMARY
BS6305 Class (A) Matching (non-speech)
2.5 TYP
12.7 +/- 0.15
2.5 TYP
3 7 0 Ω
3 1 0 n F
6 2 0 Ω
SECONDARY
3 .3 µ F
6 8 0 Ω ± 5 %
6 8 n F ± 5 %
1 : 1 ID E A L
June 15, 2005
6500 VDC
100 MΩ
9000 Ω
14 mH
66 Ω
66 Ω
2.8 H
4 7 n F ± 5 %
8 2 0 Ω
± 2 %
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