RT1N150x Isahaya Electronics Corporation, RT1N150x Datasheet - Page 2
RT1N150x
Manufacturer Part Number
RT1N150x
Description
Transistor
Manufacturer
Isahaya Electronics Corporation
Datasheet
1.RT1N150X.pdf
(3 pages)
www.DataSheet4U.com
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
SYMBOL
V
SYMBOL
V
T s t g
( B R ) C E O
I
V
V
V
C E ( s a t )
I
h
R
I
P
T j
C B O
f
C M
C B O
E B O
C E O
C
F E
T
1
C
1000
100
10
0.1
10
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
1
0
1
V
V
CE
INPUT OFF VOLTAGE V
CE
=5V
COLLECTOR CURRENT I
0.4
=0.2V
PARAMETER
PARAMETER
V S . C O L L E C T O R C U R R E N T
V S . I N P U T O F F V O L T A G E
C O L L E C T O R C U R R E N T
I N P U T O N V O L T A G E
0.8
ISAHAYA ELECTRONICS CORPORATION
10
1.2
R T 1 N 1 5 0 X SERIES
I ( OF F )
C
( mA )
I
V
V
I
V
1.6
C
C
( V )
RT1N150U
-55∼+150
CB
CE
CE
=100μA,R
=5V,I
=1mA,I
=6V,I
=50V,I
150
+150
100
C
E
2
E
B
=-10mA
=1mA
=0
=0.1mA
BE
TEST CONDITION
RT1N150M
=∞
1000
100
10
1
RATING
200
100
200
V
50
50
6
CE
-55∼+150
=5V
RT1N150C
COLLECTOR CURRENT I
+150
D C F O R W A R D C U R R E N T G A IN
V S . C O L L E C T O R C U R R E N T
10
RT1N150S
450
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
100
50
C
( mA )
LIMIT
UNIT
TYP
mW
100
200
mA
mA
℃
℃
V
V
V
100
〈 Transistor 〉
MAX
0.1
0.3
UNIT
MHz
μA
kΩ
−
V
V