BUZ74A Siemens Semiconductor Group, BUZ74A Datasheet
BUZ74A
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BUZ74A Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 74 A 500 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage 4 ...
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Power dissipation tot tot Safe operating area parameter 0.01 ...
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Typ. output characteristics parameter µ 40W tot 4 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 ...
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Drain-source on-resistance (on) j parameter 1 (on 98% 6 typ -60 - Typ. capacitances ...
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Avalanche energy parameter 2 56 190 mJ 160 E AS 140 120 100 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 74 A 07/96 ...