BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet
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Manufacturer Part Number
BUZ358
Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Manufacturer
Siemens Semiconductor Group
Available stocks
SIPMOS
Semiconductor Group
• N channel
• Enhancement mode
• Avalanche-rated
Type
BUZ 358
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
I
L = 62 mH, T
Gate source voltage
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
D
C
C
C
= 5.1 A, V
= 25 °C
= 25 °C
= 25 °C
®
Power Transistor
DD
j
= 25 °C
= 50 V, R
V
1000 V
DS
GS
I
4.5 A
D
= 25
jmax
R
2.6
DS(on)
jmax
1
Symbol
I
I
I
E
E
V
P
T
T
R
R
D
Dpuls
AR
j
stg
AR
AS
GS
tot
thJC
thJA
Package
TO-218 AA
Pin 1
G
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
E
850
125
Ordering Code
C67078-S3111-A2
4.5
5.1
18
18
75
20
1
Pin 2
D
BUZ 358
01/97
Unit
A
mJ
V
W
°C
K/W
Pin 3
S
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BUZ358 Summary of contents
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 358 1000 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
Power dissipation tot C 130 W 110 P tot 100 Safe operating area ...
Typ. output characteristics parameter µ 125W tot ...
Drain-source on-resistance (on) j parameter 3 (on 98% 4 typ -60 ...
Avalanche energy parameter 5 900 mJ E 700 AS 600 500 400 300 200 100 0 20 ...
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