BUZ347 Siemens Semiconductor Group, BUZ347 Datasheet
BUZ347
Related parts for BUZ347
BUZ347 Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 347 50 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 130 W 110 P tot 100 Safe operating area ...
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Typ. output characteristics parameter µs p 100 125W tot 0.0 1.0 2.0 3.0 Typ. ...
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Drain-source on-resistance (on) j parameter 0.075 0.065 R 0.060 DS (on) 0.055 0.050 0.045 0.040 98% 0.035 typ 0.030 0.025 0.020 0.015 0.010 0.005 ...
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Avalanche energy parameter µ ...
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Package Outlines TO-218 AA Dimension in mm Semiconductor Group Not for new design 9 BUZ 347 07/96 ...